Journal Publication Repository Design, Verification & Physical Synthesis of a 1-bit Full Adder across 18nm, 45nm, 90nm, and 180nm Technology Nodes
This repository contains the complete RTL-to-synthesis flow for a 1-bit Full Adder implemented in SystemVerilog. The design is verified using Cadence Xcelium (functional simulation) and synthesised using Cadence Genus across four CMOS technology nodes. Power, area, and delay (PPA) metrics are reported and compared.
fulladder_cadence/
├── rtl/
│ └── full_adder.sv # SystemVerilog RTL (combinational)
├── tb/
│ └── tb_full_adder.sv # Self-checking testbench (8 vectors)
├── sim/
│ ├── run_sim.sh # Cadence Xcelium simulation script
│ ├── run_sim.tcl # TCL simulation launcher
│ └── waves.sv # SimVision waveform config
├── syn/
│ ├── genus_syn.tcl # Cadence Genus synthesis (all nodes)
│ ├── constraints.sdc # SDC timing constraints
│ ├── run_all_nodes.sh # Batch synthesis across 4 nodes
│ └── parse_results.py # PPA results parser
└── reports/
├── full_adder_schematic.png # Gate-level schematic diagram
├── full_adder_waveform.png # Simulation waveform (all 8 vectors)
├── expected_results.md # PPA reference table + methodology
└── generate_visuals.py # Python script for figure generation
sum = a ⊕ b ⊕ cin
cout = (a·b) + (b·cin) + (a·cin)
Critical path: cin → sum (two series XOR gates)
| Technology | Delay (ps) | Dynamic Power (µW) | Cell Area (µm²) |
|---|---|---|---|
| 18nm | 10–15 | 0.10–0.25 | 0.25–0.45 |
| 45nm | 25–35 | 0.80–1.50 | 1.8–2.5 |
| 90nm | 50–65 | 3.5–6.0 | 7.0–10.0 |
| 180nm | 100–130 | 14–22 | 28–38 |
- Delay halves with each ~2× node shrink
- Dynamic power reduces ~100× from 180nm → 18nm
- Cell area reduces ~80–90× from 180nm → 18nm
cd sim/
xrun -sv ../rtl/full_adder.sv ../tb/tb_full_adder.sv \
-top tb_full_adder -access +rwc -timescale 1ns/1pscd syn/
# Single node (edit TECH_NODE inside genus_syn.tcl):
genus -batch -f genus_syn.tcl -log genus.log
# All 4 nodes at once:
./run_all_nodes.shcd syn/
python3 parse_results.py| Node | Architecture | Vdd (V) | Gate Length |
|---|---|---|---|
| 18nm | FinFET | 0.7–0.8 | ~7–10 nm eff |
| 45nm | Bulk CMOS | 1.0–1.1 | ~35–40 nm |
| 90nm | Bulk CMOS | 1.0–1.2 | ~65–75 nm |
| 180nm | Bulk CMOS | 1.8 | ~150–180 nm |
If you use this work in your research, please cite:
@misc{fulladder_multinode,
title = {Full Adder Design and PPA Analysis Across 18nm--180nm CMOS Nodes},
author = {nishaangelinem-coder},
year = {2026},
url = {https://github.com/nishaangelinem-coder/fulladdertest}
}

